Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond
Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond
复制标题
DOI：
10.1103/physrevb.81.045303
复制
发表时间：
2010-01-01
影响因子：
3.7
通讯作者：
Kawarada, H.
中科院分区：
文献类型：
--
作者：
Tsugawa, K.;Noda, H.;Kawarada, H.
本文从电流-电压特性的温度依赖性估算了十种金属在氢端金刚石（001）表面上肖特基势垒高度的化学变化趋势。除了测量之外，金属/氢终止的金刚石的界面在理论上被建模，包括表面导电层的载流子密度和来自氢终止的金刚石的清洁表面的电子亲和性变化。基于该模型，推导出载流子密度、电子亲合势变化和势垒高度之间的关系。该关系很好地解释了实验结果和其他比目前的工作。
Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the interface of the metal/hydrogen-terminated diamond is theoretically modeled including the carrier density of the surface conductive layer and the electron-affinity variation from the clean surface of the hydrogen-terminated diamond. Based on the model, a relation among the carrier density, the electron affinity variation, and the barrier heights are derived. The relation explains well experimental results of and other than the present work.