Experimental estimation of charge neutrality level of SiO2
Experimental estimation of charge neutrality level of SiO2
复制标题
SiO2 电荷中性水平的实验估算
DOI：
10.1016/j.apsusc.2017.06.078
复制
发表时间：
2017
影响因子：
6.7
通讯作者：
Wang Wenwu
中科院分区：
文献类型：
--
作者：
Zhang Jing;Wei Shuhua;Wang Xiaolei;Xiang Jinjuan;Wang Wenwu
利用X射线光电子能谱（XPS）研究了不同SiO2厚度的SiO2/Si叠层的导带偏移（CBO），实验提取了SiO2的电中性能级。CBO被发现是依赖于SiO2的厚度。通过用能隙态和电中性能级模型模拟SiO2的CBO与厚度的关系，确定SiO2的CNL为价带顶以上4 eV.
The charge neutrality level of SiO2is experimentally extracted by investigating conduction band offset (CBO) of SiO2/Si stack with different SiO2thicknesses using X-ray photoelectron spectroscopy. The CBO is found to be dependent on SiO2thickness. The CNL of SiO2is determined to be 4 eV above valence band maximum by modeling the CBO vs. thickness of SiO2using gap states and charge neutrality level based model.