Recent progress in III-V based ferromagnetic semiconductors: Band structure. fermi level, and tunneling transport (invited paper)
Recent progress in III-V based ferromagnetic semiconductors: Band structure. fermi level, and tunneling transport (invited paper)
复制标题
III-V 族铁磁半导体的最新进展：能带结构。
DOI：
10.1063/1.4840136
复制
发表时间：
2014
影响因子：
15
通讯作者：
and Pham Nam Hai (invited)
中科院分区：
文献类型：
--
作者：
Masaaki Tanaka;Shinobu Ohya;and Pham Nam Hai (invited)
