Memristive synaptic plasticity in Pr0.7Ca0.3MnO3 RRAM by bio-mimetic programming
Memristive synaptic plasticity in Pr0.7Ca0.3MnO3 RRAM by bio-mimetic programming
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通过仿生编程研究 Pr0.7Ca0.3MnO3 RRAM 的忆阻突触可塑性
DOI：
10.1109/drc.2014.6872334
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
B. Rajendran
中科院分区：
文献类型：
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作者：
N. Panwar;D. Kumar;N. Upadhyay;P. Arya;Udayan Ganguly;B. Rajendran
在本文中，作者利用非常简单的编程脉冲利用其记忆特性，展示了基于PCMO的RRAM器件中各种形式的时序相关可塑性。由于他们的器件在ON状态下具有固有的整流特性，他们还表明，我们的突触电路不需要限流双极二极管来防止寄生编程。因此，这些设备可以集成在交叉条阵列中，以构建能够执行各种监督和无监督学习任务的神经形态系统。
In this paper, the authors have demonstrated various forms of timing dependent plasticity in PCMO based RRAM devices using very simple programming pulses leveraging its memristive characteristics. Thanks to the intrinsic rectifying nature of their devices in the ON state, they have also shown that our synapse circuit does not require a current-limiting bipolar diode to prevent parasitic programming. These devices thus can be integrated in cross-bar arrays to build neuromorphic systems capable of performing a wide variety of supervised and unsupervised learning tasks.