High‐field domains from dc to 60 GHz
High‐field domains from dc to 60 GHz
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从直流到 60 GHz 的高场域
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
K. W. Böer
中科院分区：
文献类型：
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作者：
K. W. Böer
给出了高场磁畴的历史，并描述了作者团队在1958年发现它们后的第一个十年中的实验和理论结果。这项工作是在用作模型物质的CDS单晶小片上完成的。然后回顾了继其原始研究之后的现代高场域研究的主要发现。强调了当半导体内部的电导率下降超过线性时，所有的高场区都是由于最小熵产生原理而产生的。综述了这些高场区在重要的半导体器件中的应用，这些器件现在已经达到了数十亿美元的市场。
The history of the high‐field domains is given with the description of the experimental and theoretical results of the team of the author in the first decade after their discovery in 1958. This work is done at CdS single crystal platelets that are used as a model substance. The major findings of modern high‐field domain research that followed their original research are then reviewed. It is emphasized that all high‐field domains are created for reasons of the minimum entropy production principle when the conductivity decreases more than linear within a semiconductor. The application of these high‐field domains in important semiconductor devices are reviewed that have now reached a multibillion dollar market.