Modeling of a vertical tunneling graphene heterojunction field-effect transistor
Modeling of a vertical tunneling graphene heterojunction field-effect transistor
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DOI：
10.1063/1.4737394
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发表时间：
2012-07-16
影响因子：
4
通讯作者：
Guo, Jing
中科院分区：
文献类型：
--
作者：
Kumar, S. Bala;Seol, Gyungseon;Guo, Jing
用自洽量子输运模拟方法模拟了具有hBN层的石墨烯异质结垂直隧道效应晶体管(FET)。发现非对称的p型和n型导电是由于石墨烯接触和隧道沟道材料之间的功函数不同造成的。底部石墨烯接触的调制对决定器件的开关特性起着重要作用。由于垂直FET结构产生的静电短沟道效应，输出I-V特性不会饱和。研究了垂直FET的定标行为与栅绝缘层厚度和隧道沟道材料厚度的关系。(C)2012年美国物理研究所。[http://dx.doi.org/10.1063/1.4737394]
Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work function difference between the graphene contact and the tunneling channel material. Modulation of the bottom-graphene-contact plays an important role in determining the switching characteristic of the device. Due to the electrostatic short-channel-effects stemming from the vertical-FET structure, the output I-V characteristics do not saturate. The scaling behaviors the vertical-FET as a function of the gate insulator thickness and the thickness of the tunneling channel material are examined. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737394]