Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices
Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices
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DOI：
10.1116/1.5079574
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发表时间：
2019-03-01
影响因子：
1.4
通讯作者：
Mahapatra, R.
中科院分区：
文献类型：
--
作者：
Maji, S.;Samanta, S.;Mahapatra, R.
本文研究了W/Hf/HfOx/TiN器件的电阻存储特性和开关机理，分析了设置过程中的电流柔度对器件电阻存储特性和开关机理的影响。Hf薄盖层的存在使得能够实现稳定且均匀的双极阻变行为。顺应电流可以通过增加或减少氧空位来改变氧化物-电极界面处的势垒高度，并诱导不同的开关机制。基于低顺应性电流（50 μ A）的开关确认了由于界面效应的肖特基传导机制，而高顺应性电流（500 μ A）涉及欧姆传导机制，表示导电细丝的形成。对于从50到500 μ A变化的每个设置顺从电流，没有发现复位电流和复位电压的显著分散，表明器件的均匀性能。该器件还表现出高达2000次循环的读取耐久性。由AVS出版。
In this paper, the authors have investigated the effect of current compliance during the set process on the resistive memory characteristics and switching mechanism of W/Hf/HfOx/TiN devices. The presence of an Hf thin cap layer enables the stable and uniform bipolar resistive switching behavior. Compliance current can modify the barrier height at the oxide-electrode interface by increasing or reducing the oxygen vacancies and induce different switching mechanisms. Low compliance current (50 mu A) based switching confirms the Schottky conduction mechanism due to the interfacial effects, while high compliance current (500 mu A) involves the ohmic conduction mechanism, signifying the formation of a conductive filament. No significant dispersion of reset current and reset voltage has been found for each set compliance current varying from 50 to 500 mu A, indicating uniform performance of the devices. The devices also exhibited a read endurance up to 2000 cycles. Published by the AVS.