Surface termination and Schottky-barrier formation of In 4 Se 3 (001)
Surface termination and Schottky-barrier formation of In 4 Se 3 (001)
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In 4 Se 3 (001) 的表面终止和肖特基势垒形成
DOI：
10.1088/1361-6641/ab7e45
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发表时间：
2020
影响因子：
1.9
通讯作者：
Yost, Andrew J.
中科院分区：
文献类型：
--
作者：
Dhingra, Archit;Galiy, Pavlo V.;Wang, Lu;Vorobeva, Nataliia S.;Lipatov, Alexey;Torres, Angel;Nenchuk, Taras M.;Gilbert, Simeon J.;Sinitskii, Alexander;Yost, Andrew J.
用X射线光电子能谱研究了In4Se3（001）的表面终止和这种层状三硫属化物与Au的界面。低能电子衍射表明，该表面是高度结晶，但建议没有C 2v镜面对称。的In 4 Se 3（001）的表面终止被发现，通过角分辨X射线光电子能谱，是在，这是与观察到的肖特基势垒形成与此n型半导体。晶体管的测量证实了早期的结果从光电发射，这表明在4硒3（001）是一种n型半导体，使肖特基势垒形成与一个大的功函数金属，如Au，是预期的。测得的低载流子迁移率可能是接触的结果，并与肖特基势垒形成一致。
The surface termination of In 4 Se 3 (001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C 2v mirror plane symmetry. The surface termination of the In 4 Se 3 (001) is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In 4 Se 3 (001) is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation.