Stable InSe transistors with high-field effect mobility for reliable nerve signal sensing
Stable InSe transistors with high-field effect mobility for reliable nerve signal sensing
复制标题
具有高场效应迁移率的稳定 InSe 晶体管，可实现可靠的神经信号传感
DOI：
10.1038/s41699-019-0110-x
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发表时间：
2019-07-30
影响因子：
9.7
通讯作者：
Han, Lin
中科院分区：
文献类型：
--
作者：
Jiang, Jianfeng;Li, Jingxin;Han, Lin
在二维层状半导体材料中，硒化铟（InSe）具有高电子迁移率和稳定的材料特性，是场效应晶体管（FET）中最有前途的材料之一。已经进行了一些工作来提高InSe FET的迁移率。然而，在实际应用中，FET的电稳定性是保证电子系统性能的另一个重要因素。在这里，我们展示了一个高度稳定的InSe FET的场效应迁移率为1200 cm（2）/V.s的实际工作制度。采用聚甲基丙烯酸甲酯（PMMA）/HfO 2双层栅介质和PMMA背沟道封装工艺制作了底栅交错结构InSe FET。在正常环境条件下储存30天后，滞后保持在0.4V，并且在栅极应力V-GS为10 V的情况下，阈值电压偏移保持在0.6V，这表示迄今为止报道的最佳电稳定性。其高迁移率和电稳定性使得能够以低功耗可靠地检测弱神经动作电位。高性能的InSe FET在柔性和原位实时智能神经动作电位记录中扩展了其有前途的应用。
Among two-dimensional layered semiconductors, indium selenide (InSe) is one of the most promising materials with absolute advantages in field-effect transistors (FETs) because of its high electron mobility and stable material properties. Some work has been performed to improve the mobility of InSe FETs. However, in practical applications, electrical stability of FETs is another essential factor to guarantee the performance of the electronic system. Here, we show a highly stable InSe FET with a field-effect mobility of 1200 cm(2)/V.s in the practical working regime. The bottom-gate staggered InSe FET was fabricated with a polymethyl methacrylate (PMMA)/HfO2 dual-layer gate dielectric and PMMA back-channel encapsulation. The hysteresis was maintained at 0.4 V after 30 days of storage under normal ambient conditions, and the threshold voltage shift was retained at 0.6 V with a gate stress V-GS of 10 V, which represents the best electrical stability reported to date. Its high mobility and electrical stability enable reliable detection of the weak nerve action potential at a low power consumption. High-performance InSe FETs expand their promising applications in flexible and in situ real-time intelligent nerve action potential recording.