Thermal Stability-Enhanced and High-Efficiency Planar Perovskite Solar Cells with Interface Passivation

Thermal Stability-Enhanced and High-Efficiency Planar Perovskite Solar Cells with Interface Passivation
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界面钝化的热稳定性增强高效平面钙钛矿太阳能电池

DOI:
10.1021/acsami.7b10994
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发表时间:
2017
影响因子:
9.5
通讯作者:
Li Jinhua
Li Jinhua
中科院分区:
材料科学2区
文献类型:
--
作者:
Zhang Weihai;Xiong Juan;Jiang Li;Wang Jianying;Mei Tao;Wang Xianbao;Gu Haoshuang;Daoud Walid A.;Li Jinhua

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氧化物半导体氧化锌(ZnO)作为钙钛矿太阳能电池的电子传输层(ETL),由于其相对较高的迁移率、光学透明性、低温制备和良好的环境稳定性而引起人们的极大关注。但氧化锌的性质会与甲胺上的保护基发生反应,使电池性能变差。虽然已经研究了许多方法,包括高温退火,掺杂和表面改性,以提高具有ZnO ETL的钙钛矿太阳能电池的效率和稳定性,但器件的效率和稳定性仍然相对较低。本文采用一种新的多步退火方法存款了多孔PbI 2薄膜,提高了钙钛矿薄膜的质量和均匀性。具有ZnO ETL的电池通过溶液处理在<150 °C的温度下制造。通过这种新的退火方法制造的器件的功率转换效率(PCE)从15.5%提高到17.5%。为了提高ZnO表面CH 3 NH3 PbI 3(MAPbI 3)的热稳定性,在ZnO层和钙钛矿薄膜之间插入了一层薄的小分子[6,6]-苯基-C61-丁酸甲酯(PCBM)。有趣的是,PCBM钝化细胞的PCE可以达到近19.1%。据我们所知,这是迄今为止ZnO基钙钛矿太阳能电池的最高PCE值。更重要的是,PCBM修饰能有效抑制MAPbI 3的分解,提高电池的热稳定性。因此,ZnO是一种很有前途的钙钛矿太阳能电池电子传输材料。
As the electron transport layer (ETL) of perovskite solar cells, oxide semiconductor zinc oxide (ZnO) has been attracting great attention due to its relatively high mobility, optical transparency, low-temperature fabrication, and good environment stability. However, the nature of ZnO will react with the patron on methylamine, which would deteriorate the performance of cells. Although many methods, including high-temperature annealing, doping, and surface modification, have been studied to improve the efficiency and stability of perovskite solar cells with ZnO ETL, devices remain relatively low in efficiency and stability. Herein, we adopted a novel multistep annealing method to deposit a porous PbI2film and improved the quality and uniformity of perovskite films. The cells with ZnO ETL were fabricated at the temperature of <150 °C by solution processing. The power conversion efficiency (PCE) of the device fabricated by the novel annealing method increased from 15.5 to 17.5%. To enhance the thermal stability of CH3NH3PbI3(MAPbI3) on the ZnO surface, a thin layer of small molecule [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) was inserted between the ZnO layer and perovskite film. Interestingly, the PCE of PCBM-passivated cells could reach nearly 19.1%. To our best knowledge, this is the highest PCE value of ZnO-based perovskite solar cells until now. More importantly, PCBM modification could effectively suppress the decomposition of MAPbI3and improve the thermal stability of cells. Therefore, the ZnO is a promising candidate of electron transport material for perovskite solar cells in future applications.