Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
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DOI：
10.1063/1.2756106
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发表时间：
2007-07
影响因子：
4
通讯作者：
Yanqing Wu;Y. Xuan;T. Shen;P. Ye;Z. Cheng;Anthony Lochtefeld
中科院分区：
文献类型：
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作者：
Yanqing Wu;Y. Xuan;T. Shen;P. Ye;Z. Cheng;Anthony Lochtefeld
采用原子层沉积Al_2O_3作为栅电介质，在半绝缘衬底上制作了栅长为0.75~40μm的增强型n沟道InP金属氧化物半导体场效应晶体管。在III-V化合物半导体上的ALD工艺能够形成高质量的栅氧化物，并在化合物半导体上解除费米能级的束缚。当栅长为0.75μm，栅氧化层厚度为30 nm时，最高栅偏压为8V时，栅漏电流小于10μA/mm，最大漏电流为70 mA/mm，跨导为10ms/mm。其有效迁移率峰值为∼650 cm~2/vs，界面陷阱密度为∼(2-3)×10~(12)/cm~2 eV。
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75–40μm gate length fabricated on a semi-insulating substrate with atomic-layer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high-quality gate oxides and unpinning of Fermi level on compound semiconductors. A 0.75μm gate length E-mode n-channel MOSFET with an Al2O3 gate oxide thickness of 30nm shows a gate leakage current less than 10μA∕mm at the highest gate bias of 8V, a maximum drain current of 70mA∕mm, and a transconductance of 10mS∕mm. The peak effective mobility is ∼650cm2∕Vs and the interface trap density of Al2O3∕InP is estimated to be ∼(2–3)×1012∕cm2eV.