Resistivity Increase in Ultrafine-Line Copper Conductor for ULSIs
Resistivity Increase in Ultrafine-Line Copper Conductor for ULSIs
复制标题
用于 ULSI 的超细线铜导体的电阻率增加
DOI：
10.1143/jjap.40.l1097
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发表时间：
2001
影响因子：
1.5
通讯作者：
S. Kondo
中科院分区：
文献类型：
--
作者：
K. Hinode;Y. Hanaoka;K. Takeda;S. Kondo
利用Matthiessen规则精确地测量了铜薄膜和Cu-Cu细线的电阻率。结果表明，这种测量方法可以产生可靠的值，而不需要精确和详细的线尺寸测量。结果表明，薄膜中细线的折射率比薄膜的折射率增加得多，电子平均自由程为45 nm。我们提出了一个简单的方程表示线电阻率的线宽和线厚度。
The resistivities of copper (Cu) thin films and damascene Cu fine lines were precisely measured by utilizing Matthiessen's rule. It was shown that this measurement method can produce reliable values without requiring precise and detailed line-dimension measurements. It was found that the increase in resistivities of the fine lines is much more than that of the films, and this increase results in an electron mean free path of 45 nm. We propose a simple equation for expressing line resistivity in terms of both line width and line thickness.