The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation
The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation
复制标题
Si3N4表面钝化后PCF散射对AlGaN/AlN/GaN HEMT电性能的影响
DOI：
10.1007/s00339-018-1702-6
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发表时间：
2018
影响因子：
2.7
通讯作者：
Aijie Cheng
中科院分区：
文献类型：
--
作者：
Chen Fu;Zhaojun Lin;Peng Cui;Yuanjie Lv;Yang Zhou;Gang Dai;Chongbiao Luan;Huan Liu;Aijie Cheng
在本文中，详细的器件特性进行了研究之前和之后的Si 3 N4钝化生长的等离子体增强化学气相沉积（PECVD）。与钝化前相同的器件相比，钝化后的器件具有更好的输运特性。分析和研究了应变的变化和散射机制的影响。计算结果表明，Si 3 N4层的沉积减弱了AlGaN/AlN/GaN界面上附加极化电荷的不均匀分布。二维电子气（2DEG）电子迁移率的数值上升和测量的Ron-A值的下降具有很好的一致性，钝化处理后极化库仑场（PCF）散射的减弱被认为是导致这些现象的主要原因。
In this paper, the detailed device characteristics were investigated both before and after the Si3N4 passivation grown by plasma-enhanced chemical vapor deposition (PECVD). Better transport properties have been observed for the passivated devices compared with the same ones before passivation. The strain variation and the influence of the scattering mechanisms were analyzed and studied. The calculated results show that the non-uniform distribution of the additional polarization charges at the AlGaN/AlN/GaN interfaces has been weakened by the deposition of the Si3N4 layer. The numerical rise of the two-dimensional electron gas (2DEG) electron mobility and the decrease of the measured Ron–A values were in a good consistency, and the weakening of the polarization Coulomb field (PCF) scattering after the passivation process is considered to be the main cause of these phenomena.