Applications of Novel High-Aspect-Ratio Ultrathick UV Photoresist for Microelectroplating
Applications of Novel High-Aspect-Ratio Ultrathick UV Photoresist for Microelectroplating
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DOI：
10.1109/jmems.2011.2159098
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发表时间：
2011-07
影响因子：
2.7
通讯作者：
M. Staab;F. Greiner;M. Schlosser;H. Schlaak
中科院分区：
文献类型：
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作者：
M. Staab;F. Greiner;M. Schlosser;H. Schlaak
AZ 125 nXT是低成本高纵横比UV LIGA应用的重要选择。与SU-8相比，它具有对Si衬底的良好附着力、快速加工和电镀后易于去除等优点。作者已经展示了400、800和1400 μm的膜厚，纵横比为20：1。该光刻胶在室温下在极酸性铜电解液中以及在50°C下在几乎中性的镍电解液中的优异电铸行为已得到证实。容易去除（湿：二甲基亚砜或丙酮，干燥：具有反应性自由基的等离子体）释放纵横比为13：1和16：1的独立金属结构。
The new acrylic photoresist named AZ 125 nXT is a serious option for low-cost high-aspect-ratio UV LIGA applications. It offers advantages compared to SU-8 like good adhesion to Si substrates, rapid processing, and easy removal after electroplating. Film thicknesses of 400, 800, and 1400 μm with an aspect ratio of 20 : 1 have been shown by the authors. The photoresist's excellent electroforming behavior has been proved in an extremely acid copper electrolyte at room temperature as well as in an almost neutral nickel electrolyte at 50°C. The easy removal (wet: dimethyl sulfoxide or acetone, dry: plasma with reactive radicals) releases freestanding metal structures with aspect ratios of 13 : 1 and 16 : 1.