Realization of an Electrically Tunable Narrow-Bandwidth Atomically Thin Mirror Using Monolayer MoSe2
Realization of an Electrically Tunable Narrow-Bandwidth Atomically Thin Mirror Using Monolayer MoSe2
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DOI：
10.1103/physrevlett.120.037401
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发表时间：
2018-01-18
影响因子：
8.6
通讯作者：
Imamoglu, Atac
中科院分区：
文献类型：
--
作者：
Back, Patrick;Zeytinoglu, Sina;Imamoglu, Atac
二维半导体，如货车德瓦尔斯异质结构的出现，推动了凝聚态物理学的新研究方向，并使具有独特功能的新型器件的开发成为可能。在这里，我们的实验表明，单层的MoSe 2嵌入在电荷控制的异质结构可以用来实现电可调的原子薄镜，其效果87%的消光的入射场是共振与其激子跃迁。相应的最大反射系数为41%，仅受激子跃迁的辐射衰减率与非辐射线宽之比的限制，并且在400 W/cm（2）以下与入射光强度无关。我们证明，可以通过施加栅极电压，修改单层电荷密度的反射镜的反射率进行大幅修改。我们的研究结果可以找到从快速可编程空间光调制器到用于光学机械设备的悬挂式超轻镜的应用。
The advent of two-dimensional semiconductors, such as van der Waals heterostructures, propels new research directions in condensed matter physics and enables development of novel devices with unique functionalities. Here, we show experimentally that a monolayer of MoSe2 embedded in a charge controlled heterostructure can be used to realize an electrically tunable atomically thin mirror, which effects 87% extinction of an incident field that is resonant with its exciton transition. The corresponding maximum reflection coefficient of 41% is only limited by the ratio of the radiative decay rate to the nonradiative linewidth of exciton transition and is independent of incident light intensity up to 400 W/cm(2). We demonstrate that the reflectivity of the mirror can be drastically modified by applying a gate voltage that modifies the monolayer charge density. Our findings could find applications ranging from fast programable spatial light modulators to suspended ultralight mirrors for optomechanical devices.