A facile synthesis of CH3NH3PbBr3 perovskite quantum dots and their application in flexible nonvolatile memory
A facile synthesis of CH3NH3PbBr3 perovskite quantum dots and their application in flexible nonvolatile memory
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DOI：
10.1063/1.4976709
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发表时间：
2017-02
影响因子：
4
通讯作者：
Kaiyu Yang;Fushan Li;Chandrasekar Perumal Veeramalai;T. Guo
中科院分区：
文献类型：
--
作者：
Kaiyu Yang;Fushan Li;Chandrasekar Perumal Veeramalai;T. Guo
在这项工作中，我们提出了一种简单易行的一步合成策略来制备CH 3 NH3 PbBr 3钙钛矿量子点并将其应用于非易失性存储器。在这种基于钙钛矿量子点和聚合物复合材料的存储器件中观察到电阻开关现象，其ON/OFF电流比大于103，并且具有良好的再现性和可靠性。柔性存储器也被证明，并讨论了一种可能的电阻切换机制。我们的工作为有机铅卤化物钙钛矿量子点在柔性透明非易失性存储器中的应用铺平了道路。
In this work, we present a simple and facile one step synthesis strategy to prepare CH3NH3PbBr3 perovskite quantum dots and apply them into the nonvolatile memory. Resistive switching phenomenon was observed in this perovskite quantum dots and polymer composite based memory device with the ON/OFF current ratio larger than 103 as well as good reproducibility and reliability. Flexible memory was also demonstrated, and a possible resistance switching mechanism was discussed. Our work paves a way for the application of organolead halide perovskite quantum dots in flexible and transparent nonvolatile memories.