Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
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DOI：
10.1016/j.jcrysgro.2013.11.056
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发表时间：
2014-09-01
影响因子：
1.8
通讯作者：
Fornari, R.
中科院分区：
文献类型：
--
作者：
Gogova, D.;Wagner, G.;Fornari, R.
用金属有机物气相外延法在Al_2 O_3（0001）和β-Ga_2 O_3（100）衬底上生长了掺Si的β-Ga_2 O_3薄膜。同质外延生长的单相，光滑的β-Ga 2 O3层掺杂Si，位错密度不超过那些熔融生长的衬底，被证明。Ga氧化物层的生长条件，结构和电性能之间的相互作用进行了研究。XRD和HRTEM表明，与未掺杂的Ga氧化物层相比，掺杂浓度在10（17）-10（18）cm（-3）范围内的Si不会劣化Ga氧化物层的质量。用高分辨透射电镜研究了掺杂和未掺杂材料中缺陷的不同性质。发现β-Ga_2 O_3：Si中a面上的孪晶和层错密度比未掺杂的材料低一个数量级，而在β-Ga_2 O_3中很少观察到斜面上的缺陷。(C)2013爱思唯尔有限公司版权所有。
Thin films of beta-Ga2O3 doped with Si are grown on Al2O3 (0001) and beta-Ga2O3 (100) substrates by metal organic vapor phase epitaxy. Homoepitaxial growth of single-phase, smooth beta-Ga2O3 layers doped with Si, with a dislocation density not exceeding those of the melt grown substrate, was demonstrated. The interplay between growth conditions, structural and electrical properties of the Ga-oxide layers is studied. XRD and HRTEM show that Si-doping in the concentration range 10(17)-10(18) cm(-3) does not deteriorate the quality of the Ga-oxide layers compared to undoped ones. The different nature of defects in undoped and doped material is investigated by HRTEM. It is found out that the density of twins and stacking faults on a-planes are an order of magnitude lower in beta-Ga2O3:Si than in undoped material, while defects on inclined planes have rarely been observed in beta-Ga2O3. (C) 2013 Elsevier B.V. All rights reserved.