Fine-pitch through-silicon via integration with self-aligned back-side benzocyclobutene passivation layer
Fine-pitch through-silicon via integration with self-aligned back-side benzocyclobutene passivation layer
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DOI：
10.1049/mnl.2016.0267
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发表时间：
2016-10
影响因子：
1.3
通讯作者：
Y. Guan;Shengli Ma;Qinghua Zeng;J. Chen;Yufeng Jin
中科院分区：
文献类型：
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作者：
Y. Guan;Shengli Ma;Qinghua Zeng;J. Chen;Yufeng Jin
提出了一种具有自对准背面苯并环丁烯钝化层的细间距硅通孔集成方法。与传统的光刻工艺不同，钝化层是通过利用等离子体刻蚀和化学机械抛光工艺来实现的。由于其良好的可重复性控制，这种方法可以帮助减少工艺缺陷和铜污染。采用了大量的测试技术，包括X射线检测、光学和扫描电子显微镜观察、四探针电学测量以及矢量网络分析仪，以验证制造质量和电学性能。测试结果表明，这种细间距硅通孔集成方法具有良好的应用前景。
A fine-pitch through-silicon via integration approach with self-aligned back-side benzocyclobutene passivation layer is proposed. Different from the conventional lithographic process, the passivation layer is realised by leveraging plasma etching and chemical-mechanical polishing process. With its well-controlled repeatability, this approach can help reduce the process defect and copper contamination. A plenty of measurement techniques including X-ray radiographic testing, optical and scanning electron microscope observation, four-probe electrical measurement, as well as vector network analyser, are employed in order to verify the fabrication quality and the electrical performances. All the test results support that this fine-pitch through-silicon via integration approach has a promising application prospect.