Deuterated silicon nitride photonic devices for broadband optical frequency comb generation
Deuterated silicon nitride photonic devices for broadband optical frequency comb generation
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DOI：
10.1364/ol.43.001527
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发表时间：
2018-04-01
期刊：
影响因子：
3.6
通讯作者：
Mirin, Richard P.
中科院分区：
文献类型：
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作者：
Chiles, Jeff;Nader, Nima;Mirin, Richard P.
我们报告并表征了用于非线性集成光子学的低温等离子体沉积氘代氮化硅薄膜。峰值处理温度低于 300 摄氏度，与互补金属氧化物半导体衬底后端兼容。我们实现的微谐振器在 1552 nm 处品质因数高达 1.6 x 10(6)，在 lambda = 1510-1600 nm 范围内品质因数 >1.2 x 10(6)，无需退火或应力管理（薄膜厚度为 920 nm）。然后，我们通过生成 1 THz 自由光谱范围、900 nm 带宽调制不稳定微谐振器克尔梳和倍频程、超连续谱展宽光谱，展示了该平台在非线性光子学中的直接实用性。
We report and characterize low-temperature, plasma-deposited deuterated silicon nitride films for nonlinear integrated photonics. With a peak processing temperature less than 300 degrees C, it is back-end compatible with complementary metal-oxide semiconductor substrates. We achieve microresonators with a quality factor of up to 1.6 x 10(6) at 1552 nm and >1.2 x 10(6) throughout lambda = 1510-1600 nm, without annealing or stress management (film thickness of 920 nm). We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free-spectral-range, 900 nm bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.