Self-powered broadband, high-detectivity and ultrafast photodetectors based on Pd-MoS2/Si heterojunctions
Self-powered broadband, high-detectivity and ultrafast photodetectors based on Pd-MoS2/Si heterojunctions
复制标题
基于 Pd-MoS2/Si 异质结的自供电宽带、高探测率和超快光电探测器
DOI：
10.1039/c5cp05642j
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发表时间：
2016-01-14
影响因子：
3.3
通讯作者：
Zhu, J.
中科院分区：
文献类型：
--
作者：
Hao, L. Z.;Gao, W.;Zhu, J.
在这项工作中，自供电的光电探测器器件制造通过集成的钯掺杂二硫化钼薄膜在硅（Pd-MoS 2/Si）。通过结构和化学分析技术揭示了在MoS 2膜中用Pd掺杂剂取代主Mo原子。由于Pd原子的引入，所制备的Pd-MoS 2/Si器件的光伏特性得到了很大的提高，促进了其作为零偏压自供电光电探测器的应用。所得结果进一步表明，该器件对从紫外光到近红外光（300-1100 nm）的宽带波长高度敏感。特别地，Pd-MoS 2/Si光电探测器显示出类似于10（14）Jones（Jones = cm Hz（1/2）W-1）的超快探测率、类似于654.0mA W-1的响应率和类似于2.1 μ s的超快响应速度。目前的工作开辟了新的途径，为开发高性能的光通信和成像技术，以及光电电路的光电探测器。
In this work, a self-powered photodetector device is fabricated through the integration of a palladium-doped molybdenum disulfide thin film on silicon (Pd-MoS2/Si). The substitution of host Mo atoms with Pd dopants in the MoS2 film is revealed by structural and chemical analysis techniques. Due to the incorporation of Pd atoms into the MoS2 films, the photovoltaic characteristics of the fabricated Pd-MoS2/Si device were enhanced largely, promoting its application as a self-powered photodetector operated at zero bias voltage. The obtained results further show that the device is highly sensitive to broadband wavelengths from ultraviolet to near-infrared light (300-1100 nm). In particular, the Pd-MoS2/Si photodetector shows an ultrahigh detectivity of similar to 10(14) Jones (Jones = cm Hz(1/2) W-1), a responsivity of similar to 654.0 mA W-1, and an ultrafast response speed of similar to 2.1 mu s. The present work opens new avenues for developing high-performance photodetectors for optical communications and imaging techniques as well as optoelectronic circuits.