High detection sensitivity of ultraviolet 4H-SiC avalanche photodiodes
High detection sensitivity of ultraviolet 4H-SiC avalanche photodiodes
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DOI：
10.1109/jqe.2007.905031
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发表时间：
2007-11-01
影响因子：
2.5
通讯作者：
Campbell, Joe C.
中科院分区：
文献类型：
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作者：
Bai, Xiaogang;Guo, Xiangyi;Campbell, Joe C.
我们报告了具有极低暗电流的 4H-SiC p-i-n 雪崩光电二极管 (APD)。当偏置光电流增益 M 为 1000 时，直径为 100 μ m 的器件表现出 5 pA (63 nA/cm(2)) 的暗电流，对应于 5 fA (63 pA/cm(2)) 的初级倍增暗电流。 λ = 280 nm 时，单位增益的峰值响应率为 93 mA/W（外部量子效率 = 41%）。过量噪声系数对应于 kappa = 0.1。据报道检测到了几十飞瓦的紫外线。
We report 4H-SiC p-i-n avalanche photodiodes (APDs) with very low dark current. When biased for a photocurrent gain M of 1000 a 100-mu m-diameter device exhibits dark current of 5 pA (63 nA/cm(2))corresponding to primary multiplied dark current of 5 fA (63 pA/cm(2)). The peak responsivity at unity gain is 93 mA/W (external quantum efficiency = 41%) at lambda =280 nm. The excess noise factor corresponds to kappa = 0.1. Detection of several tens of femtowatts of ultraviolet light is reported.