A TCAD-based roadmap for high-speed SiGe HBTs
A TCAD-based roadmap for high-speed SiGe HBTs
复制标题
基于 TCAD 的高速 SiGe HBT 路线图
DOI：
10.1109/sirf.2014.6828505
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
P. Chevalier
中科院分区：
文献类型：
--
作者：
M. Schroter;T. Rosenbaum;S. Voinigescu;P. Chevalier
本文介绍了2013年SiGe HBT技术路线图以及毫米波频率下相关基准电路的结果。该路线图首次基于一套无缝的TCAD器件仿真工具，以获得完整晶体管结构的一致紧凑模型参数。所有已知的运输，结构寄生和温度的影响已经包括在结果中。基准电路包括LNA、PA、VCO和CML RO，已针对每个技术节点和各种商业相关频率进行了优化。
Results of the 2013 technology roadmap for SiGe HBTs and associated benchmark circuits at mm-wave frequencies are presented. For the first time, the roadmap has been based on a seamless set of TCAD device simulation tools in order to obtain consistent compact model parameters for the complete transistor structure. All known transport, structural parasitic and temperature effects have been included in the results. The benchmark circuits, comprising an LNA, PA, VCO and CML RO, have been optimized for each technology node and a variety of commercially relevant frequencies.