Symmetrical doherty amplifier with high efficiency over large output power dynamic range

Symmetrical doherty amplifier with high efficiency over large output power dynamic range
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对称 Doherty 放大器在大输出功率动态范围内具有高效率

DOI:
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发表时间:
2014
期刊:
Intelligent Memory Systems
影响因子:
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通讯作者:
C. Fager
C. Fager
中科院分区:
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文献类型:
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作者:
Mustafa Ozen;C. Fager

文献摘要

被引文献

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对于传统的Doherty功率放大器,非对称单元用于在大(> 6dB)输出功率动态范围上实现高效率,即较大的C类单元。在本文中,它将从理论上证明,在大的动态范围内的高效率也可以实现使用对称器件,同时仍然保持两个晶体管单元的全电压和电流摆幅。与不对称Doherty相比,使用较小的C类单元具有更高的增益和功率附加效率(PAE)的优点。建议的对称Doherty概念的实验验证了3.5 GHz的28瓦的电路演示使用相同的GaN HEMT器件制造。在峰均功率比为9 dB的20 MHz LTE测试信号下,平均功率附加效率为52%,邻区功率泄漏比为-52 dB。
For the conventional Doherty power amplifiers, asymmetrical cells are used to achieve high efficiency over large (> 6 dB) output power dynamic ranges, i.e. larger class-C cell. In this paper, it will be theoretically proven that high efficiency over large dynamic ranges also can be achieved using symmetrical devices, while still maintaining full voltage and current swing of both transistor cells. Using a smaller class-C cell compared to the asymmetrical Doherty has the advantages of higher gain and power added efficiency (PAE). The proposed symmetrical Doherty concept is experimentally verified by a 3.5 GHz 28 Watt circuit demonstrator fabricated using identical GaN HEMT devices. An average power added efficiency of 52% and adjacent power leakage ratio of -52 dB is obtained with 9 dB peak-to-average power-ratio 20 MHz LTE test signals.