True Random Number Generation Using Read Noise of Flash Memory Cells
True Random Number Generation Using Read Noise of Flash Memory Cells
复制标题
使用闪存单元的读取噪声生成真正的随机数
DOI：
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发表时间：
2018
影响因子：
3.1
通讯作者：
A. Milenković
中科院分区：
文献类型：
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作者：
B. Ray;A. Milenković
在本文中，我们提出并证明了一种新的技术，真正的随机数生成使用商业现成的闪存。已知闪存单元在感测其阈值电压期间呈现热噪声和随机电报噪声。为了通过标准数字闪存接口提取闪存位的固有噪声特性，我们利用编程干扰和读取噪声特性，这是所有NAND闪存阵列的基本特性。所提出的技术进行了实验证明和评估，使用国家的最先进的闪存芯片。实验结果表明，该技术能够提取高质量，高吞吐量，可控（或可调），温度和老化容忍的随机位。所提出的技术产生的随机位通过了美国国家标准与技术研究所统计测试套件的所有测试。所提出的技术的优点如下：1）它具有成本效益，因为它不需要任何特殊的电路或硬件修改; 2）它耐受老化和温度影响; 3）它易于在软件中实现并通过软件更新部署;以及4）它广泛适用于利用现代NAND闪存芯片的所有电子设备。
In this paper, we propose and demonstrate a novel technique for true random number generation using commercial off-the-shelf Flash memory. Flash memory cells are known to exhibit thermal noise and random telegraph noise during sensing of their threshold voltage. In order to extract this inherent noise properties of the Flash memory bits through a standard digital Flash memory interface, we utilize the program disturb and read noise characteristics, which are fundamental properties of all NAND Flash memory arrays. The proposed technique is experimentally demonstrated and evaluated using state-of-art Flash memory chips. The experimental evaluation shows that the proposed technique enables extraction of high quality, high throughput, controllable (or tunable), and temperature- and aging-tolerant random bits. The random bits generated by the proposed technique pass all tests in the National Institute of Standards and Technology statistical test suite. The advantages of the proposed technique are as follows: 1) it is cost-effective as it does not require any special circuitry or hardware modification; 2) it is tolerant to aging and temperature effects; 3) it is easy to implement in software and to deploy through software updates; and 4) it is widely applicable to all electronic devices utilizing modern NAND Flash memory chips.