Correlation between stoichiometry, strain, and metal-insulator transitions of NdNiO3 films
Correlation between stoichiometry, strain, and metal-insulator transitions of NdNiO3 films
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DOI：
10.1063/1.4914002
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发表时间：
2015-03-02
影响因子：
4
通讯作者：
Stemmer, Susanne
中科院分区：
文献类型：
--
作者：
Hauser, Adam J.;Mikheev, Evgeny;Stemmer, Susanne
研究了薄膜化学计量比和应变对不同条件下生长的NdNiO 3薄膜的金属-绝缘体转变（MIT）和霍尔系数的影响。无应变的晶格参数和晶格失配应变的生长压力范围内生长的薄膜，并在不同的基板上进行评估。结果表明，MIT的温度和金属相的霍尔系数都对薄膜应变高度敏感。在用较低的氧/总生长压力生长的膜中，可以获得非常大的压缩面内应变，这可以起到抑制MIT的作用。霍尔系数和MIT的温度是相对不敏感的生长压力，提供了在相同的应变下的薄膜进行比较。结果支持巡回图片的过渡，这是由Ni电子（g）带控制，并且是相对不敏感的薄膜化学计量的变化。(C)2015年AIP Publishing LLC。
The interplay of film stoichiometry and strain on the metal-insulator transition (MIT) and Hall coefficient of NdNiO3 films grown under different conditions is investigated. Unstrained lattice parameters and lattice mismatch strains are evaluated for films grown under a range of growth pressures and on different substrates. It is shown that both the temperature of the MIT and the Hall coefficient in the metallic phase are highly sensitive to film strain. In films grown with lower oxygen/total growth pressures, very large compressive in-plane strains can be obtained, which can act to suppress the MIT. Both the Hall coefficient and the temperature of the MIT are relatively insensitive to growth pressure, provided that films under the same strain are compared. The results support an itinerant picture of the transition that is controlled by the Ni e(g) bands, and that is relatively insensitive to changes in film stoichiometry. (C) 2015 AIP Publishing LLC.