Photoconductive LT-GaAs Terahertz Antennas: Correlation Between Surface Quality and Emission Strength
Photoconductive LT-GaAs Terahertz Antennas: Correlation Between Surface Quality and Emission Strength
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DOI：
10.1007/s10762-016-0353-y
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发表时间：
2017-01
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影响因子：
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通讯作者：
O. Abdulmunem;K. Hassoon;J. Völkner;M. Mikulics;K. Gries;J. Balzer
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文献类型：
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作者：
O. Abdulmunem;K. Hassoon;J. Völkner;M. Mikulics;K. Gries;J. Balzer
我们使用专门设计的太赫兹时域光谱系统，研究了低温生长的砷化镓光电导天线的表面特性对太赫兹（THz）发射强度的影响。该系统允许我们沿着长度为 10 毫米的共面带状线天线的 10 微米间隙激发六个不同的位置，而无需改变光学或太赫兹光束路径的对准。给出了与从原子力和扫描电子显微镜提取的表面粗糙度和晶粒尺寸的比较。
We investigate the influence of the surface properties of a low-temperature-grown GaAs photoconductive antenna on the terahertz (THz) emission strength, using a specially designed THz time-domain spectroscopy system. The system allows us to excite six different positions along the 10 μm gap of a coplanar stripline antenna with a length of 10 mm without changing the alignment of the optical or THz beam path. A comparison to the surface roughness and the grain size which are extracted from an atomic force and a scanning electron microscope is given.