Q-boosted switched inductor based on 1:2 transformer
Q-boosted switched inductor based on 1:2 transformer
复制标题
基于 1:2 变压器的 Q 升压开关电感器
DOI：
10.1002/mop.31948
复制
发表时间：
2019
影响因子：
1.5
通讯作者：
Zhai Jianfeng
中科院分区：
文献类型：
--
作者：
Chen Zhe;Fan Kuikui;Zhai Jianfeng
介绍了一种基于1：2 Transformer的Q值升压型开关电感的研制。Q升压开关电感由1：2电感负载的Transformer和RF开关组成。对次级线圈中的涡流、等效电感和Q提升因子进行了理论分析和推导。与传统的1：1电感负载Transformer的开关电感相比，在开关ON状态下，次级线圈中的涡流将减少到1/2，开关导通电阻引起的功耗将减少到1/4。因此，电感器Q将在开关接通状态下升压。原型已经设计和制作的Q-升压和传统的开关电感。测量结果表明，在导通状态下，峰值电感Q值从19.3提高到30.4。所提出的Q提升方法兼容多种平面电路技术，即PCB、低温共烧陶瓷（LTCC）、单片微波集成电路（MMIC）技术等。
In this article, the development of quality factor (Q) boosted switched inductor based on 1:2 transformer is presented. The Q‐boosted switched inductor consists of 1:2 inductor‐loaded transformer and RF switch. The eddy current in the secondary coil, equivalent inductance, and Q‐boosted factor are theoretically analyzed and derived. In the proposed topology at switch ON‐state, the eddy current in the secondary coil will decrease to 1/2, and the dissipated power due to the switch on‐resistance will decrease to 1/4, compared with conventional switched inductor with 1:1 inductor‐loaded transformer. Thus, the inductor Q will be boosted at switch ON‐state. Prototype has been designed and fabricated for the Q‐boosted and conventional switched inductors. Measured results show the peak inductor Q is greatly improved from 19.3 to 30.4 at ON‐state. The proposed Q‐boosting method is compatible with multiple planar circuit techniques, that is, PCB, low‐temperature co‐fired ceramic (LTCC), monolithic microwave integrated circuit (MMIC) techniques, etc.