Fabrication and characterization of a Cu seed layer on a 60-nm trench-patterned SiO2 substrate by a self-assembled-monolayer (SAM) process
Fabrication and characterization of a Cu seed layer on a 60-nm trench-patterned SiO2 substrate by a self-assembled-monolayer (SAM) process
复制标题
通过自组装单层 (SAM) 工艺在 60 nm 沟槽图案 SiO2 基板上制造 Cu 籽晶层并对其进行表征
DOI：
10.1016/j.apsusc.2009.01.037
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发表时间：
2009
影响因子：
6.7
通讯作者：
Sung
中科院分区：
文献类型：
--
作者：
Won;Gil;S. J. Hong;C. Yoon;Joon;J. Cho;Sung
在覆有3nm Au催化层的SiO2/Si衬底上成功地连续化学沉积了10nm厚的Cu层。Au催化层是通过以nh2头基结束的自组装单层（SAM）过程形成的，带负电的Au粒子通过与带正电的NH2-SAM静电相互作用沉积在其上。采用x射线光电子能谱（XPS）和接触角分析对Au和NH2-SAM层进行了分析。原子力显微镜、场发射扫描电镜和XPS分析结果表明，该化学法制备的Cu层具有台阶覆盖度好、晶粒尺寸小、与基体附着力好的特点。该工艺是一种很有前途的制备60纳米沟槽型导电铜种子层的方法。
Continuous electroless deposition of a 10-nm thick layer of Cu was successfully performed on a SiO2/Si substrate coated with a 3-nm Au catalytic layer. The Au catalytic layer was formed by a self-assembled monolayer (SAM) process terminated with NH2headgroups, upon which negatively charged Au particles were deposited via electrostatic interaction with the positively charged NH2-SAM. The Au and NH2-SAM layers were analyzed by X-ray photoelectron spectroscopy (XPS) and contact angle analysis. Atomic force microscopy, field emission scanning electron microscopy, and XPS revealed that the Cu layer formed by this electroless processes had good step-coverage, small grain size, and excellent adhesion to the substrate. The proposed process is a very promising method for fabrication of a conductive Cu seed layer in a 60-nm trench-pattern.