Repeated Removal of Thin Layers of Silicon by Anodic Oxidation
Repeated Removal of Thin Layers of Silicon by Anodic Oxidation
复制标题
通过阳极氧化反复去除硅薄层
DOI：
10.1149/1.2133085
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发表时间：
1976
影响因子：
3.9
通讯作者：
J. E. Jones
中科院分区：
文献类型：
--
作者：
H. D. Barber;H. Lo;J. E. Jones
半导体器件的电特性主要由掺入半导体体中的杂质及其空间分布决定。有三种基本方法可用于确定半导体中的杂质分布。第一个是扩展阻力（1-3），它将在小面积上快速地并在任何深度上给出完整的轮廓。然而，设备是昂贵的，校准是困难的和可变的，用于解释的计算机分析通常是必要的，并且步长通常大于5001 k。第二种方法通过CV测量确定曲线（4-6）。由于半导体的雪崩击穿限制了可以确定轮廓的距离，因此通常不能用这种方法确定完整的轮廓。第三种方法涉及在去除受控量的半导体之后的连续测量。CV测量、放射性示踪剂计数（7，8）或dif-
The electrical characteristics of semiconductor devices are primarily determined by the impurities incorporated into the body of the semiconductor and by their spatial distribution. Three basic methods are available to determine impurity profiles in semiconductors. The first is spreading resistance (1-3) which will give a complete profile on a small area, rapidly and to any depth. However, the equipment is expensive, calibration is difficult and variable, computer analysis for interpretation is usually necessary, and step sizes are normally larger than 5001k. The second method determines the profile from CV measurements (4-6). A complete profile cannot usually be determined by this method since the distance over which the profile can be determined is limited by the avalanche breakdown of the semiconductor. The third method involves successive measurements following the removal of controlled amounts of the semiconductor. CV measurements, radio-tracer counting (7, 8) or dif-