Electrical properties of TaN–Cu nanocomposite thin films
Electrical properties of TaN–Cu nanocomposite thin films
复制标题
TaN-Cu纳米复合薄膜的电性能
DOI：
10.1016/j.ceramint.2003.12.051
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发表时间：
2004
影响因子：
5.2
通讯作者：
U. T. Lam
中科院分区：
文献类型：
--
作者：
C. Wang;J. Hsieh;Y. Fu;Chuan Li;Tupei Chen;U. T. Lam
TaN–Cu nanocomposite thin films used as materials for TFR (thin film resistor) were prepared by reactive co-sputtering of Ta and Cu in the plasma of N2and Ar. After deposition, the films were annealed using rapid thermal processing (RTP) at 400°C for 2, 4, 8min, respectively to induce the nucleation and grain growth of Cu. The results reveal that temperature coefficient of resistivity (TCR) values will increase with the increase of Cu content for both the as-deposited and annealed films. The increase of nitrogen will result in higher resistivity and more negative TCR. At a constant nitrogen flow rate, the resistivity and TCR may increase or decrease with the increase of annealing time depending on the Cu content. In general, to reach near-zero TCR value, more copper is needed to compensate the negative effect caused by Ta–N. Thus, electrical properties of thin films can be characterized as functions of N2flow rate, Cu concentration and annealing time.
