Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/
Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/
复制标题
SiO/sub 2/ 中含有 F 或 Cl 的 MOS 结构中热电子引起的界面退化得到显着改善
DOI：
10.1109/55.20406
复制
发表时间：
1988
影响因子：
4.9
通讯作者：
T. Ma
中科院分区：
文献类型：
--
作者：
Y. Nishioka;E. D. da Silva;Y. Wang;T. Ma
研究了SiO/sub 2/（MOS）中F和Cl的掺入对金属/SiO/sub 2/（MOS）界面热电子损伤敏感性的影响。发现在热SiO/sub 2/中引入微量的F或Cl，可大大抑制Fowler-Nordheim隧穿超热电子在界面上产生的陷阱。此外，热电子诱导的界面陷阱，这通常是在干氧化物制成的样品中观察到的栅极尺寸的依赖性，不会出现在这样的氯化或氟化的样品。然而，当过量的F或Cl被引入SiO/sub 2/中时，上述益处将减少。F和Cl发挥的可能作用，导致实验观察进行了讨论。<<ETX>>
The effects of F and Cl incorporated in SiO/sub 2/ on the susceptibility of the metal/SiO/sub 2/ (MOS) interface to hot-electron damage have been studied. It has been found that, by introducing a very small amount of F or Cl in the thermal SiO/sub 2/, the generation of interface traps by Fowler-Nordheim tunneled hot electrons can be greatly suppressed. In addition, the gate-size dependence of hot-electron-induced interface traps, which is normally observed in samples made of dry oxides, does not appear in such chlorinated or fluorinated samples. When excess amounts of F or Cl are introduced into SiO/sub 2/, however, the benefits mentioned will diminish. The possible roles that F and Cl play that lead to the experimental observations are discussed.<<ETX>>