Titanium-based thin film metallic glass as diffusion barrier layer for PbTe-based thermoelectric modules
Titanium-based thin film metallic glass as diffusion barrier layer for PbTe-based thermoelectric modules
复制标题
钛基薄膜金属玻璃作为 PbTe 基热电模块扩散阻挡层
作者：
Chia;Hsin;M. Agne;I. Witting;Ping;G. J. Snyder;J. Chu
薄膜金属玻璃（TFMG）是碲化铅基热电（TE）组件的有效扩散阻挡层。采用化学气相沉积法制备了Cu/TFMG/PbTe反应偶，并在673 K下退火8-96 h。采用传输线法对PbTe/TFMG的接触电阻率进行了评估，其值保持在3.3-2.5 × 10−9（Ω m2）的范围内。在673 K下退火48 h后，钛基TFMG仍保持非晶态，且由于没有晶界而有效地阻止了互扩散，只允许金属电极和TE衬底之间的体扩散，薄膜金属玻璃（TFMG）是PbTe基热电（TE）组件的有效扩散阻挡层。采用化学气相沉积法制备了Cu/TFMG/PbTe反应偶，并在673 K下退火8-96 h。采用传输线法对PbTe/TFMG的接触电阻率进行了评估，其值保持在3.3-2.5 × 10−9（Ω m2）的范围内。钛基TFMG在673 K下退火48 h后保持非晶态，并通过不具有晶界而有效地阻止相互扩散，这仅允许金属电极和TE衬底之间的体扩散。
The thin film metallic glass (TFMG) is an effective diffusion barrier layer for PbTe-based thermoelectric (TE) modules. Reaction couples structured with Cu/TFMG/PbTe are prepared via sputter-deposition and are annealed at 673 K for 8-96 h. The transmission line method is adopted for the assessment of electrical contact resistivity upon the PbTe/TFMG, and the value remains in the range of 3.3-2.5 × 10−9 (Ω m2). The titanium-based TFMG remains amorphous upon annealing at 673 K for 48 h and effectively blocks the inter-diffusion by not having grain-boundaries, which only allows the bulk diffusion between the metal electrode and the TE substrate.The thin film metallic glass (TFMG) is an effective diffusion barrier layer for PbTe-based thermoelectric (TE) modules. Reaction couples structured with Cu/TFMG/PbTe are prepared via sputter-deposition and are annealed at 673 K for 8-96 h. The transmission line method is adopted for the assessment of electrical contact resistivity upon the PbTe/TFMG, and the value remains in the range of 3.3-2.5 × 10−9 (Ω m2). The titanium-based TFMG remains amorphous upon annealing at 673 K for 48 h and effectively blocks the inter-diffusion by not having grain-boundaries, which only allows the bulk diffusion between the metal electrode and the TE substrate.