Formation of cellular defect structure on GaSb ion-implanted at low temperature
Formation of cellular defect structure on GaSb ion-implanted at low temperature
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DOI：
10.1063/1.1493662
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发表时间：
2002-08-15
影响因子：
3.2
通讯作者：
Yoshiie, T
中科院分区：
文献类型：
--
作者：
Nitta, N;Taniwaki, M;Yoshiie, T
用扫描电镜、原子力显微镜和透射电镜研究了低温Sn离子注入（100）GaSb中异常胞状结构的形成。用60 keV的Sn离子注入GaSb表面，在其表面形成了由多个单胞组成的精细结构。细胞直径和分隔细胞的壁厚分别约为50和10 nm，在4.0 × 10 ~（14）~ 8.9 × 10 ~（14）ions/cm ~ 2的离子剂量范围内几乎不变。随着注入剂量的增加，细胞的深度线性增加，从注入剂量为4.0 × 10（14）ions/cm（2）的样品中的100 nm增加到注入剂量为8.9 × 10（14）ions/cm（2）的样品中的220 nm。根据实验结果，可以得出结论，蜂窝状结构的发展起源于空洞的形成。讨论了一种改进的缺陷形成机制的基础上的运动的重结晶引起的点缺陷。(C)2002年美国物理学会。
Formation of the anomalous cellular structure in (100) GaSb with Sn ion-implantation at a low temperature is investigated by cross-sectional scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. A fine structure consisting of many cells was formed on GaSb surface implanted by 60 keV Sn. The cell diameter and the thickness of the walls partitioning the cells were about 50 and 10 nm, respectively, which are almost constant in the range of the ion dose 4.0x10(14)-8.9x10(14) ions/cm(2). The depth of the cells increased linearly with increasing ion dose, from 100 nm in the sample implanted with a dose of 4.0x10(14) ions/cm(2) to 220 nm in that implanted with a dose of 8.9x10(14) ions/cm(2). From the experimental results, it is concluded that the development of the cellular structure originates in formation of the voids. An improved defect formation mechanism based on movement of the implantation-induced point defects is discussed. (C) 2002 American Institute of Physics.