Cytotoxicity and pro-inflammatory effect of GaSb thin films in L929 cells
Cytotoxicity and pro-inflammatory effect of GaSb thin films in L929 cells
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GaSb 薄膜对 L929 细胞的细胞毒性和促炎作用
DOI：
10.1142/s0217979221502970
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发表时间：
2021
影响因子：
1.7
通讯作者：
Nishimoto Naoki
中科院分区：
文献类型：
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作者：
Fujihara Junko;Nishimoto Naoki
基于锑化镓（GaSb）的器件在红外区域有效地工作。研究GaSb薄膜的毒性对于在生物体内使用嵌入式GaSb基器件是必要的。在这项研究中，生存能力，氧化应激，炎症反应，凋亡诱导和遗传毒性的GaSb使用L929细胞暴露于GaSb 24小时后进行了测定。采用射频磁控溅射法在石英衬底上制备了GaSb薄膜。将这些膜浸泡在细胞培养基中以制备供试品溶液。用GaSb提取物处理的细胞的活力低于对照细胞的活力。锑化镓引起很少的活性氧（ROS）的产生。肿瘤坏死因子（TNF）-和白细胞介素（IL）-1水平升高，在砷化镓处理的细胞培养上清液。细胞凋亡和遗传毒性不明显的治疗后GaSb。总的来说，这些结果表明，与先前研究含砷III-V族材料相比，GaSb的毒性较低，这对于生物器械是理想的。
Gallium antimonide (GaSb)-based devices operate efficiently in the infrared region. Investigating the toxicity of GaSb thin film is necessary for using embedded GaSb-based devices in living organisms. In this study, viability, oxidative stress, inflammatory responses, apoptosis induction and genotoxicity of GaSb were assayed using L929 cells following a 24 h exposure to GaSb. GaSb thin films were deposited on a quartz substrate using radio frequency (RF) magnetron sputtering. These films were soaked in cell culture medium to prepare test solutions. The viability of cells treated with the GaSb extract was lower than that of control cells. GaSb elicited little reactive oxygen species (ROS) generation. Tumor necrosis factor (TNF)-and interleukin (IL)-1levels were elevated in GaSb-treated cell culture supernatants. Apoptosis and genotoxicity were not evident following GaSb treatment. Overall, these results demonstrate the low toxicity of GaSb compared with previous studies examining arsenic-containing III–V materials, which is desirable for biological devices.