Layered BiOI single crystals capable of detecting low dose rates of X-rays.
Layered BiOI single crystals capable of detecting low dose rates of X-rays.
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DOI:
10.1038/s41467-023-38008-4
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发表时间:
2023-04-28
影响因子:
16.6
通讯作者:
Hoye, Robert L. Z.
中科院分区:
文献类型:
--
作者:
Jagt, Robert A.;Bravic, Ivona;Eyre, Lissa;Galkowski, Krzysztof;Borowiec, Joanna;Dudipala, Kavya Reddy;Baranowski, Michal;Dyksik, Mateusz;Van de Goor, Tim W. J.;Kreouzis, Theo;Xiao, Ming;Bevan, Adrian;Plochocka, Paulina;Stranks, Samuel D.;Deschler, Felix;Monserrat, Bartomeu;MacManus-Driscoll, Judith L.;Hoye, Robert L. Z.
Detecting low dose rates of X-rays is critical for making safer radiology instruments, but is limited by the absorber materials available. Here, we develop bismuth oxyiodide (BiOI) single crystals into effective X-ray detectors. BiOI features complex lattice dynamics, owing to the ionic character of the lattice and weak van der Waals interactions between layers. Through use of ultrafast spectroscopy, first-principles computations and detailed optical and structural characterisation, we show that photoexcited charge-carriers in BiOI couple to intralayer breathing phonon modes, forming large polarons, thus enabling longer drift lengths for the photoexcited carriers than would be expected if self-trapping occurred. This, combined with the low and stable dark currents and high linear X-ray attenuation coefficients, leads to strong detector performance. High sensitivities reaching 1.1 × 103 μC Gyair−1 cm−2 are achieved, and the lowest dose rate directly measured by the detectors was 22 nGyair s−1. The photophysical principles discussed herein offer new design avenues for novel materials with heavy elements and low-dimensional electronic structures for (opto)electronic applications. The complex coupling between charge-carriers and phonons in bismuth oxyiodide (BiOI) are uncovered, showing how carrier localisation is avoided and long transport lengths achieved. As a result, BiOI is revealed to be highly effective for X-ray detection.
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影响因子:
3.5
作者:
Frutos, Maia Mombru;Barthaburu, Maria Eugenia Perez;Aguiar, Ivana
通讯作者:
Aguiar, Ivana
影响因子:
3.7
作者:
Kresse, G;Furthmuller, J
通讯作者:
Furthmuller, J
影响因子:
2.7
作者:
Giannozzi, P.;Andreussi, O.;Baroni, S.
通讯作者:
Baroni, S.
影响因子:
--
作者:
DANCOFF, SM
通讯作者:
DANCOFF, SM
DOI:
10.1103/physrevb.5.594
发表时间:
1972-01-01
期刊:
PHYSICAL REVIEW B-SOLID STATE
影响因子:
--
作者:
DOW, JD;REDFIELD, D
通讯作者:
REDFIELD, D