1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates
1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates
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DOI：
10.1364/oe.19.011381
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发表时间：
2011-06-06
期刊：
影响因子：
3.8
通讯作者：
Seeds, Alwyn
中科院分区：
文献类型：
--
作者：
Wang, Ting;Liu, Huiyun;Seeds, Alwyn
我们报告了在 Si (100) 衬底上外延生长的电泵浦 1.3-μm InAs/GaAs 量子点激光器的首次运行。激光结构通过分子束外延直接生长在硅衬底上。对于室温下具有劈裂面的大面积激光器，已证明 1.302 μm 激光的阈值电流密度为 725 A/cm(2)，输出功率类似于 26 mW。这些结果可直接归因于初始 GaAs 成核层的优化生长温度。 (C)2011 美国光学学会
We report the first operation of an electrically pumped 1.3-mu m InAs/GaAs quantum-dot laser epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si substrate by molecular beam epitaxy. Lasing at 1.302 mu m has been demonstrated with threshold current density of 725 A/cm(2) and output power of similar to 26 mW for broad-area lasers with as-cleaved facets at room temperature. These results are directly attributable to the optimized growth temperature of the initial GaAs nucleation layer. (C)2011 Optical Society of America