Nanoscale Conducting Oxide PlasMOStor
Nanoscale Conducting Oxide PlasMOStor
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DOI：
10.1021/nl502998z
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发表时间：
2014-11-01
期刊：
影响因子：
10.8
通讯作者：
Atwater, Harry A.
中科院分区：
文献类型：
--
作者：
Lee, Ho W.;Papadakis, Georgia;Atwater, Harry A.
我们在实验上证明了基于透明导电氧化物活性区域的超跨色素马多尔（PlasMostor），这是一种等离子插槽波导场效应调节剂。通过电气调节沉积在高度受限等离子槽波导间隙中的导电氧化物材料，我们证明了现场效应动力学，从而导致具有高动态范围（2.71 dB/mu M）和低波导损耗（类似于0.45 db/mu m）的调节。较大的调制强度是由于当信号波长接近电压调节的氧化物积累层的表面等离子体共振时，复杂介电函数的较大变化引起的。该结果提供了有关对未来集成纳米光电电路的超跨纳米级调节剂设计的见解。
We experimentally demonstrate an ultracompact PlasMOStor, a plasmon slot waveguide field-effect modulator based on a transparent conducting oxide active region. By electrically modulating the conducting oxide material deposited into the gaps of highly confined plasmonic slot waveguides, we demonstrate field-effect dynamics giving rise to modulation with high dynamic range (2.71 dB/mu m) and low waveguide loss (similar to 0.45 dB/mu m). The large modulation strength is due to the large change in complex dielectric function when the signal wavelength approaches the surface plasmon resonance in the voltage-tuned conducting oxide accumulation layer. The results provide insight about the design of ultracompact, nanoscale modulators for future integrated nanophotonic circuits.