Anisotropy of chemical transformation from In2Se3 to CuInSe2 nanowires through solid state reaction.
Anisotropy of chemical transformation from In2Se3 to CuInSe2 nanowires through solid state reaction.
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DOI：
10.1021/ja901086t
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发表时间：
2009-05
影响因子：
15
通讯作者：
David T. Schoen;H. Peng;Yi Cui
中科院分区：
文献类型：
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作者：
David T. Schoen;H. Peng;Yi Cui
利用VLS技术合成的In(2)Se(3)纳米线通过与铜的固相反应转化为高质量的单晶CuInSe(2)纳米线。用原位透射电镜研究了这一过程。转变温度表现出令人惊讶的各向异性，In(2)Se(3)纳米线沿其[0001]方向生长，在225℃的低温下发生转变，而在[11(2)0]方向生长的纳米线则需要更高的温度（585℃）。这些结果为在相对较低的温度下合成CuInSe(2)纳米线提供了一条途径，并深入了解了薄膜太阳能电池制造中常用的转变细节。
In(2)Se(3) nanowires synthesized by the VLS technique are transformed by solid-state reaction with copper into high-quality single-crystalline CuInSe(2) nanowires. The process is studied by in situ transmission electron microscopy. The transformation temperature exhibits a surprising anisotropy, with In(2)Se(3) nanowires grown along their [0001] direction transforming at a surprisingly low temperature of 225 degrees C, while nanowires in a [11(2)0] orientation require a much higher temperature of 585 degrees C. These results offer a route to the synthesis of CuInSe(2) nanowires at a relatively low temperature as well as insight into the details of a transformation commonly used in the fabrication of thin-film solar cells.