Performance of GAA poly-Si channel of junctionless field effect transistors with ultra-thin body
Performance of GAA poly-Si channel of junctionless field effect transistors with ultra-thin body
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发表时间：
2015-06
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通讯作者：
Yan-Bo Liu;Y. Jhan;Cheng-Ping Wang;Yung-Chun Wu
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作者：
Yan-Bo Liu;Y. Jhan;Cheng-Ping Wang;Yung-Chun Wu
具有沟槽结构的玛瑙全包围（GAA）多晶硅沟道无结场效应晶体管（JL-FET）已被成功地展示。该结型场效应晶体管具有低的漏致势垒降低（DIBL）、约70 mV/decade的亚阈值摆幅（SS）和高的ION/IOFF比（>108）。
Agate-all-around (GAA) with trench structure poly-Si channel junctionless Field-Effect Transistor (JL-FET) has been successfully demonstrated. This JL-FET shows excellent performance in a low drain-induced barrier lowering (DIBL), a steep Sub-threshold Swing (SS) ~70 mV/decade and high ION/IOFF (>108) ratio.