Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant
Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant
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DOI：
10.1364/ome.383260
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发表时间：
2020-02
影响因子：
2.8
通讯作者：
Dongxia Wei;S. Maddox;P. Sohr;S. Bank;S. Law
中科院分区：
文献类型：
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作者：
Dongxia Wei;S. Maddox;P. Sohr;S. Bank;S. Law
具有高掺杂浓度的InAs等半导体具有多种应用，包括作为中红外光电器件的组件。不幸的是，通过分子束外延生长这些材料是具有挑战性的，需要高生长速率和低生长温度。我们发现铋表面活性剂的使用改善了硅掺入到InAs中，同时降低了光学散射率，增加了载流子迁移率，降低了表面粗糙度，并使其能够在更高的衬底温度和更慢的生长速率下生长。我们使用III-V材料中掺杂剂偏析和缺陷形成的微观理论来解释我们的发现。
Semiconductors such as InAs with high dopant concentrations have a variety of applications, including as components of mid-infrared optoelectronic devices. Unfortunately, growth of these materials by molecular beam epitaxy is challenging, requiring high growth rates and low growth temperatures. We show that the use of a bismuth surfactant improves silicon incorporation into InAs while simultaneously reducing the optical scattering rate, increasing the carrier mobility, reducing surface roughness, and enabling growth at higher substrate temperatures and slower growth rates. We explain our findings using microscopic theories of dopant segregation and defect formation in III-V materials.