SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques
SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques
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DOI：
10.1088/1674-4926/37/5/053001
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发表时间：
2016-05-01
影响因子：
5.1
通讯作者：
Deshpande, M. P.
中科院分区：
文献类型：
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作者：
Chaki, Sunil H.;Chaudhary, Mahesh D.;Deshpande, M. P.
采用化学浴沉积法（CBD）、浸涂法和连续离子层吸附反应法（SILAR）制备了SnS薄膜。在他们中，CBD薄膜在两个温度下沉积：环境温度和70摄氏度。采用X射线能量色散分析（EDAX）、X射线衍射（XRD）、拉曼光谱、扫描电子显微镜（SEM）和光学光谱等技术对薄膜进行了表征。通过测量薄膜的I-V特性、直流电阻率随温度的变化以及室温霍尔效应，研究了薄膜的电输运特性。本文对所得结果进行了讨论。
The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 degrees C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.