Low noise fast bipolar transistors for detector preamplifiers
Low noise fast bipolar transistors for detector preamplifiers
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用于探测器前置放大器的低噪声快速双极晶体管
DOI：
10.1109/23.34473
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发表时间：
1989
影响因子：
1.8
通讯作者：
Y. Fukushima
中科院分区：
文献类型：
--
作者：
M. Morii;T. Taniguchi;Y. Fukushima
用共基极放大器测量了几种微波双极晶体管的噪声参数。晶体管的基极扩展电阻r/sub bb/由测量的噪声参数确定。有些物种的r/sub bb/小于30 Ω。对于高能物理中的低噪声MEMS应用，与发射极电阻相比，这些r/sub bb/值的串联噪声贡献小得可以忽略不计。采用2SC 3585作为输入晶体管，输入噪声电压为0.98 nV/Hz，输入噪声电流为1.81 pA/Hz。发现了晶体管结构与其r/sub bb/之间的简单关系。
The noise parameters of several species of microwave bipolar transistors were measured using a common base amplifier. The base spread resistance r/sub bb/ of the transistors was determined from the measured noise parameters. Some species were found to have r/sub bb/ of less than 30 Omega . For low-noise preamplifier applications in high-energy physics, the series noise contribution from these values of r/sub bb/ is negligibly small compared with that due to the emitter resistance. Using 2SC3585 as the input transistor, an input noise voltage of 0.98 nV/ square root Hz and input noise current of 1.81 pA/ square root Hz were obtained. A simple relation between the structure of the transistors and their r/sub bb/ was found. >