Azidation of Silicon(111) Surfaces
Azidation of Silicon(111) Surfaces
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DOI：
10.1021/ja804448p
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发表时间：
2008-11-12
影响因子：
15
通讯作者：
Heath, James R.
中科院分区：
文献类型：
--
作者：
Cao, Peigen;Xu, Ke;Heath, James R.
报道了一种两步氯化/叠氮化法制备叠氮化物修饰的硅（111）表面。XPS和IR分析表明叠氮化物与硅形成共价键。结合扫描隧道显微镜和光谱分析，不同的动力学速率，叠氮化物覆盖率，和表面积分布，根据叠氮化溶剂。
A two-step chlorination/azidation process was reported to prepare azide-modified silicon(111) surfaces. XPS and IR analyses show the covalent bonding of azide with silicon. In combination with scanning tunneling microscopy and spectroscopy analyses, different kinetic rates, azide coverages, and surface-area distributions were derived depending on the azidation solvent.