Hot Carrier-Voltaic Effect in p-n Junction and Its Application to Electron Emitters and Light Detectors
Hot Carrier-Voltaic Effect in p-n Junction and Its Application to Electron Emitters and Light Detectors
复制标题
p-n结中的热载流子伏特效应及其在电子发射器和光探测器中的应用
DOI：
--
复制
发表时间：
1976
期刊：
影响因子：
--
通讯作者：
Y. Amemiya
中科院分区：
文献类型：
--
作者：
M. Umeno;H. Hattori;T. Jimbo;Y. Sugito;Y. Amemiya
当p-n结在带隙能量大于光子能量的条件下被强光束照射时，在p-n结上感应出极性与普通光伏效应（例如太阳能电池）相反的电动势。通过研究热载流子在平行于结面的电场中激发产生的跨p-n结的感应电压，将这种反常光伏现象解释为光激发热载流子光伏效应。作为热载流子伏打效应的有用应用，提出了高效率电子发射器和高灵敏度光探测器。
When a p-n junction is illuminated by intense light beam in a condition of band gap energy larger than photon energy, electromotive force is induced across the p-n junction with the polarity opposite to ordinary photo-voltaic effect such as a solar cell. Such an anomalous photovoltaic phenomenon has been explained as optically excited hot carrier-voltaic effect by studying the induced voltage across the p-n junction due to hot carriers excited in electric field parallel to the junction plane. As useful applications of the hot carrier-voltaic effect, high efficiency electron emitter and high sensitivity light detector are proposed.