Effects of bias voltage on structure and properties of TiAl‐doped a‐C:H films prepared by magnetron sputtering
Effects of bias voltage on structure and properties of TiAl‐doped a‐C:H films prepared by magnetron sputtering
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DOI：
10.1002/sia.3501
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发表时间：
2011-03
影响因子：
1.7
通讯作者：
Xianjuan Pang;Junying Hao;Peng Wang;Yanqiu Xia;Wei-min Liu
中科院分区：
文献类型：
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作者：
Xianjuan Pang;Junying Hao;Peng Wang;Yanqiu Xia;Wei-min Liu
采用中频磁控溅射TiAl靶，在氩气和甲烷混合气氛下，在Si衬底上制备了掺氢TiAl的a-C：H薄膜。利用原子力显微镜（AFM）、XPS、拉曼光谱和纳米压痕等测试手段，研究了衬底偏压对薄膜表面形貌、硬度、化学性质和成键类型等结构和性能的影响。在UMT-2 MT摩擦磨损试验机上对沉积膜的摩擦磨损性能进行了表征。利用扫描电镜分析了干摩擦条件下钢球表面的磨痕和磨屑。结果表明，在-100 V下沉积的薄膜表现出较低的摩擦系数，这归因于更容易形成石墨化的转移层。版权所有© 2010约翰威利父子有限公司.
Hydrogenated TiAl‐doped a‐C:H films were deposited on Si substrates by middle frequency magnetron sputtering TiAl target in argon and methane gas mixture atmosphere. Effects of substrate bias voltage on structure and properties of the films, such as the surface morphology, hardness, chemical nature and bond types, were investigated by means of atomic force microscopy (AFM), XPS, Raman spectroscopy and nanoindentation. The friction and wear behaviors of the deposited films were characterized on an UMT‐2MT tribometer. SEM was utilized to analyze the wear scar on steel balls and debris after sliding on the deposited films under dry friction conditions. The results demonstrated that the film deposited at − 100 V exhibited low friction coefficient which is attributed to the easier formation of graphitized transfer layer. Copyright © 2010 John Wiley & Sons, Ltd.