Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing
Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing
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DOI：
10.1063/1.4960461
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发表时间：
2016-08
影响因子：
4
通讯作者：
T. Mimura;Kiliha Katayama;Takao Shimizu;H. Uchida;T. Kiguchi;Akihiro Akama;T. Konno;O. Sakata;H. Funakubo
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文献类型：
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作者：
T. Mimura;Kiliha Katayama;Takao Shimizu;H. Uchida;T. Kiguchi;Akihiro Akama;T. Konno;O. Sakata;H. Funakubo
采用脉冲激光沉积技术在不同衬底上制备了0.07YO1.5-0.93HfO2(YHO7)薄膜。薄膜生长采用了(111)取向的10wt.%掺锡氧化铟(ITO)//(111)Y稳定的氧化锆、(111)Pt/TiOx/SiO_2/(001)Si衬底和(111)ITO/(111)Pt/TiOx/SiO_2/(001)Si衬底。在本研究中，使用了X射线衍射测量，包括θ-2θ测量、倒易空间映射和极图测量来研究薄膜。在(111)ITO//(111)Y稳定的氧化锆衬底上的薄膜是具有铁电正交相的(111)取向外延薄膜，在(111)ITO/(111)Pt/TiOx/SiO_2/(001)Si衬底上的薄膜是具有铁电正交相的(111)取向的单轴织构薄膜，而在不含ITO的(111)Pt/TiOx/SiO_2/(001)Si衬底上没有观察到薄膜的择优取向。极化滞后测试证实，在ITO覆盖的衬底上制备的薄膜具有S结构。
0.07YO1.5-0.93HfO2 (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In2O3(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiOx/SiO2/(001)Si substrates, and (111)ITO/(111)Pt/TiOx/SiO2/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ–2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiOx/SiO2/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiOx/SiO2/(001)Si substrate, which does not contain ITO. Polarization–hysteresis measurements confirmed that the films on ITO covered substrates had s...