Electronic structure origins of polarity-dependent high-TC ferromagnetismin oxide-diluted magnetic semiconductors
Electronic structure origins of polarity-dependent high-TC ferromagnetismin oxide-diluted magnetic semiconductors
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DOI：
10.1038/nmat1616
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发表时间：
2006-04-01
期刊：
影响因子：
41.2
通讯作者：
Gamelin, DR
中科院分区：
文献类型：
--
作者：
Kittilstved, KR;Liu, WK;Gamelin, DR
基于稀磁半导体（DMS）的未来自旋电子学技术将在很大程度上依赖于对此类材料中铁磁性微观起源的正确理解。宽禁带DMS中室温铁磁性的发现有很大的希望，但这种铁磁性仍然知之甚少。在这里，我们证明了TM 2+：ZnO DMS的电子结构和极性相关的高T-C铁磁性之间的密切联系，其中TM 2+表示3d过渡金属离子。从施主和受主型激发态的能量预测的3D系列TM 2+：ZnO DMS的铁磁性趋势再现实验趋势。这些结果为理解n型和p型铁磁氧化物DMS提供了统一的基础。
Future spintronics technologies based on diluted magnetic semiconductors (DMSs) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. Discoveries of room-temperature ferromagnetism in wide-bandgap DMSs hold great promise, but this ferromagnetism remains poorly understood. Here we demonstrate a close link between the electronic structures and polarity-dependent high-T-C ferromagnetism of TM2+: ZnO DMSs, where TM2+ denotes 3d transition metal ions. Trends in ferromagnetism across the 3d series of TM2+: ZnO DMSs predicted from the energies of donor- and acceptor-type excited states reproduce experimental trends well. These results provide a unified basis for understanding both n- and p-type ferromagnetic oxide DMSs.