Low-temperature preparation of self-polarized Pb(Mg1/3Nb2/3)O3–PbTiO3 films on well crystallized LaNiO3 electrodes
Low-temperature preparation of self-polarized Pb(Mg1/3Nb2/3)O3–PbTiO3 films on well crystallized LaNiO3 electrodes
复制标题
DOI：
10.1016/j.jallcom.2013.06.174
复制
发表时间：
2013-11
影响因子：
6.2
通讯作者：
Yuanyuan Zhao;Xiaolong Li;G. Hu;Jianbin Xu
中科院分区：
文献类型：
--
作者：
Yuanyuan Zhao;Xiaolong Li;G. Hu;Jianbin Xu
采用溶胶-凝胶法在[1 0 0]取向的LaNiO 3（LNO）电极上制备了两种不同厚度的0.68Pb（Mg 1/3 Nb 2/3）O3-0.32PbTiO3（PMN-PT）薄膜。相纯PMN-PT膜可以在500 °C下形成在结晶良好的LNO电极上，比沉积在具有较低结晶度的LNO电极上的膜低100 °C。所有的纯相PMN-PT薄膜都是自极化的。随着退火温度从500 °C增加到650 °C，沉积在结晶良好的LNO电极上的薄膜的平均压电系数（d33）从11 μ m/V增加到257 μ m/V。这种现象归因于缺陷偶极子和残余应力。
0.68Pb(Mg1/3Nb2/3)O3–0.32PbTiO3(PMN-PT) films were deposited on [1 0 0]-oriented LaNiO3(LNO) electrodes with two different crystallinities by a sol–gel method. A phase-pure PMN-PT film can be formed on the well crystallized LNO electrode at 500 °C, 100 °C lower than the film deposited on the LNO electrode with lower crystallinity. All the phase-pure PMN-PT films are self-polarized. With the increase of the annealing temperature from 500 to 650 °C, the mean piezoelectric coefficient (d33) of the films deposited on the well crystallized LNO electrodes increases from 11 to 257 pm/V. This phenomenon is assigned to the defect dipoles and residual stress.