Quantum computing with defects

Quantum computing with defects
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DOI:
10.1073/pnas.1003052107
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发表时间:
2010-05-11
影响因子:
11.1
通讯作者:
Awschalom, D. D.
Awschalom, D. D.
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Weber, J. R.;Koehl, W. F.;Awschalom, D. D.

文献摘要

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识别和设计用作量子比特(量子信息的基本单位)的物理系统是量子计算机开发的关键步骤。在固态的可能性中,金刚石中被称为氮空位(NV-1)中心的缺陷因其坚固性而突出-其量子态可以在室温下高保真地初始化,操纵和测量。在这里,我们描述了如何系统地识别其他深中心缺陷具有类似的量子力学性质。我们提出了一个列表的物理标准,这些中心和他们的主机应该满足和解释这些要求可以结合使用电子结构理论,智能排序通过候选缺陷系统。为了详细说明这些点,我们比较了金刚石中的NV-1中心与4 H碳化硅(SiC)中的几个深中心的电子结构计算。然后,我们讨论了其他四面体配位半导体中类似缺陷的建议标准。
Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV-1) center stands out for its robustness-its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV-1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.