Heteroepitaxy of Fin-Shaped InGaN Nanoridge Using Molecular Beam Epitaxy
Heteroepitaxy of Fin-Shaped InGaN Nanoridge Using Molecular Beam Epitaxy
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DOI：
10.1021/acs.cgd.8b01211
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发表时间：
2018-09
影响因子：
3.8
通讯作者：
Yongbum Park;J. Gim;Reed Yalisove;R. Hovden;Z. Mi
中科院分区：
文献类型：
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作者：
Yongbum Park;J. Gim;Reed Yalisove;R. Hovden;Z. Mi
我们采用自上而下的刻蚀和自下而上的分子束外延相结合的方法在GaN/蓝宝石衬底上生长了有序的富In单晶InGaN纳米脊线阵列。在图案化的GaN/蓝宝石衬底上生长InGaN的初始过程中，主要形成(1011)r面，抑制了[1011]晶体方向的生长，形成了三角形的InGaN纳米结构。随着生长的进一步进行，在∼纳米棱镜结构的顶部形成了一个窄的(InGaN 50 Nm)单晶鳍状InGaN纳米脊线。与外延生长的平面InGaN层或InGaN纳米线相比，得到的窄翅片状InGaN纳米线结构显示出极强的光致发光(PL)强度，中心波长在524-560 nm之间，分布较窄。高分辨扫描电子显微镜和能量色散X射线衍射图表明，沿每个InGaN的顶部形成了一个锐利的单晶InGaN纳米线(∼50 nm宽)。
We have demonstrated a well-ordered In-rich single crystalline InGaN nanoridge array grown on GaN/sapphire substrate using the integration of top-down etching and bottom-up molecular beam epitaxy. During the initial growth of InGaN on a patterned GaN/sapphire substrate, a (1011) r-plane predominantly forms, suppressing the growth in [1011] crystal direction and resulting in a triangular InGaN nanoprism. As the growth proceeds further, a narrow (∼50 nm) single-crystal fin-shaped InGaN nanoridge forms atop the InGaN nanoprism structure. The resulting narrow fin-shaped InGaN nanoridge structure shows extremely strong photoluminescence (PL) intensity with a center wavelength at 524–560 nm and narrow distribution compared to the epitaxially grown planar InGaN layer or InGaN nanowire. High-resolution scanning transmission electron microscopy (STEM) combined with an energy-dispersive X-ray (EDS) map reveals that a sharply faceted single-crystal InGaN nanoridge (∼50 nm width) forms along the top of each InGaN n...